Title

Physical Analysis And Modeling Of The Reliability Of Algaas/Gaas Hbts

Abstract

This paper provides an analysis of the physical mechanisms underlying the long-term base current instability in the AlGaAs/GaAs heterojunction bipolar transistor (HBT). Such a current instability gives rise to the HBT long-term current gain drift and thus is a major concern for the HBT reliability. In this paper, a detailed analysis for two frequently seen base current instabilities is presented. This is followed by the development of a semi-empirical model for predicting the HBT mean time to failure (MTTF).

Publication Date

1-1-1999

Publication Title

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Number of Pages

173-179

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/ipfa.1999.791329

Socpus ID

0033283799 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0033283799

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