Title
Base Current Instability Of Algaas/Gaas Hbts Operated At Low Voltages
Abstract
This paper provides an analysis of the physical mechanisms underlying the long-term base current instability of the AlGaAs/GaAs heterojunction bipolar transistor (HBT). such a current instability gives rise to the HBT long-term current gain drift and thus is a major concern for the HBT reliability. Two different types of base current instability commonly found in the AlGaAs/GaAs HBT are reviewed, and a detailed analysis for one of the base current instabilities taking place in the low-voltage region is presented and discussed.
Publication Date
12-1-1999
Publication Title
Proceedings of the IEEE Hong Kong Electron Devices Meeting
Number of Pages
98-101
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0033296632 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0033296632
STARS Citation
Liou, J. J. and Rezazadeh, A. A., "Base Current Instability Of Algaas/Gaas Hbts Operated At Low Voltages" (1999). Scopus Export 1990s. 4262.
https://stars.library.ucf.edu/scopus1990/4262