Title

Base Current Instability Of Algaas/Gaas Hbts Operated At Low Voltages

Abstract

This paper provides an analysis of the physical mechanisms underlying the long-term base current instability of the AlGaAs/GaAs heterojunction bipolar transistor (HBT). such a current instability gives rise to the HBT long-term current gain drift and thus is a major concern for the HBT reliability. Two different types of base current instability commonly found in the AlGaAs/GaAs HBT are reviewed, and a detailed analysis for one of the base current instabilities taking place in the low-voltage region is presented and discussed.

Publication Date

12-1-1999

Publication Title

Proceedings of the IEEE Hong Kong Electron Devices Meeting

Number of Pages

98-101

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

0033296632 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0033296632

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