Title
High-Temperature Creep And Microstructural Evolution Of Chemically Vapor-Deposited Silicon Carbide Fibers
Abstract
The creep behavior of three types of silicon carbide fibers that have been fabricated via chemical vapor deposition is described. The fibers exhibit only primary creep over the range of conditions studied (1200°-1400°C, 190-500 MPa). A transmission electron microscopy study of the microstructural development that is induced by the creep deformation of SCS-6 silicon carbide fibers at 1400°C is presented. Significant grain growth occurs in all silicon carbide regions of the fiber during creep, in contrast to the reasonably stable microstructure that is observed after annealing at the same temperature and time.
Publication Date
1-1-1999
Publication Title
Journal of the American Ceramic Society
Volume
82
Issue
2
Number of Pages
407-413
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1111/j.1551-2916.1999.tb20077.x
Copyright Status
Unknown
Socpus ID
0033078430 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0033078430
STARS Citation
Lewinsohn, Charles A.; Giannuzzi, Lucille A.; and Bakis, Charles E., "High-Temperature Creep And Microstructural Evolution Of Chemically Vapor-Deposited Silicon Carbide Fibers" (1999). Scopus Export 1990s. 3939.
https://stars.library.ucf.edu/scopus1990/3939