Title

A New Structure Design Of A Silicon-On-Insulator Mosfet Reducing The Self-Heating Effect

Abstract

A new silicon-on-insulator (SOI) device structure is proposed. The new design provides a heat conducting path between the channel and substrate. The device has been verified in two-dimensional device simulation. This new structure reduces device self-heating and increases the drain of the SOI MOSFET. © 1999 Taylor and Francis Group, LLC.

Publication Date

1-1-1999

Publication Title

International Journal of Electronics

Volume

86

Issue

6

Number of Pages

707-712

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1080/002072199133166

Socpus ID

0032630225 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0032630225

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