Title

Collector–Base Junction Capacitance Of Advanced Bipolar Transistors Operating At Avalanche Breakdown

Abstract

Modeling of the collector–base junction capacitance of the advanced bipolar transistors operating at avalanche breakdown is developed. The comprehensive junction capacitance model accounts for high current and high field effects at the collector–base junction. The impact ionization generates tremendous amount of free carriers in the collector–base space‐charge region which increases the collector–base junction capacitance at the avalanche breakdown regime. The present collector–base junction capacitance is useful for device and circuit design under avalanche breakdown prior to the actual fabrication of the circuit. Copyright © 1992 WILEY‐VCH Verlag GmbH & Co. KGaA

Publication Date

1-1-1992

Publication Title

physica status solidi (a)

Volume

134

Issue

2

Number of Pages

575-581

Document Type

Article

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1002/pssa.2211340227

Socpus ID

84990642362 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84990642362

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