Title

Cmos Rf Design For Reliability Using Adaptive Gate-Source Biasing

Keywords

Adaptive biasing; Channel hot electron (CHE); Gate oxide breakdown; Negative-bias temperature instability (NBTI); Power amplifier; Power-added efficiency; Radio frequency (RF); Third-order intercept point

Abstract

An adaptive gate-source biasing scheme to improve the MOSFET RF circuit reliability is presented. The adaptive method automatically adjusts the gate-source voltage to compensate the reduction in the drain current subjected to various device reliability mechanisms. The MOS dc circuit using the adaptive technique is less sensitive to a threshold voltage and mobility degradations from a long-term stress effect. A class-AB RF power amplifier example shows that the use of a source resistance makes the power-added efficiency robust against the threshold voltage and mobility variations, whereas the use of a source inductance is more reliable for the input third-order intercept point. © 2008 IEEE.

Publication Date

9-4-2008

Publication Title

IEEE Transactions on Electron Devices

Volume

55

Issue

9

Number of Pages

2348-2353

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TED.2008.928024

Socpus ID

50549089988 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/50549089988

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