Title
Gate Oxide Breakdown Location Effect On Power Amplifier And Mixed-Signal Circuits
Abstract
Gate oxide breakdown location effect on the class AB power amplifier and mixed-signal sample-and-hold circuit have been studied. The soft breakdown has minor effect on the performance of power amplifier and sample-hold circuit, while the hard breakdown at the drain side reduces power efficiency of class AB power amplifier and degrades signal to noise ratio of sample-and-hold circuit significantly. © 2008 IEEE.
Publication Date
12-1-2008
Publication Title
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
Number of Pages
1365-1368
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/ICSICT.2008.4734815
Copyright Status
Unknown
Socpus ID
60649107189 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/60649107189
STARS Citation
Yuan, J. S. and Ma, J., "Gate Oxide Breakdown Location Effect On Power Amplifier And Mixed-Signal Circuits" (2008). Scopus Export 2000s. 9685.
https://stars.library.ucf.edu/scopus2000/9685