Title

Ingap/Gaas Heterojunction Bipolar Transistor And Rf Power Amplifier Reliability

Abstract

Electrothermal stress on advanced InGaP/GaAs heterojunction bipolar transistors (HBTs) was carried out experimentally. It showed a long-term stress-induced base current instability and a decrease in the DC current gain. A class-AB RF power amplifier (PA) was also considered to study the stress effect on the amplifier's RF performance. The SPICE Gummel-Poon (SGP) model parameters were extracted from the pre- and post-stress HBT data and used in Cadence SpectreRF simulation. The amplifier's post-stress RF characteristics, such as the output power and power-added efficiency (PAE), remained almost unchanged even though the post-stress HBT's DC current gain had dropped to 73.6% of its initial value. © 2008 Elsevier Ltd. All rights reserved.

Publication Date

8-1-2008

Publication Title

Microelectronics Reliability

Volume

48

Issue

8-9

Number of Pages

1212-1215

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.microrel.2008.06.009

Socpus ID

50249149694 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/50249149694

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