Title

Study Of Electrothermal Stress Effect On Rf Performance Of Ingap/Gaas Heterojunction Bipolar Transistor-Based Low-Noise Amplifier

Abstract

This paper investigates the electrothermal stress-induced performance degradation of a cascode low-noise amplifier (LNA) built using InGaP/GaAs heterojunction bipolar transistors (HBTs). Changes in device characteristics due to the electrothermal stress were examined experimentally. At the moderate base-emitter voltage, the base current increases and current gain decreases after stress. The SPICE Gummel-Poon (SGP) model parameters were extracted before and after stress and measured device data were used in the Cadence SpectreRF simulation to study the impact of electrothermal stress on the low-noise amplifier performance. © 2008 IEEE.

Publication Date

12-29-2008

Publication Title

2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008

Number of Pages

-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/CSICS.2008.15

Socpus ID

57849106472 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/57849106472

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