Title

Intermixing Properties Of Inp-Based Mqws

Abstract

The intermixing characteristics of three widely used combinations of InP based quantum wells (QW) are investigated using the impurity-free vacancy disordering (IFVD) technique. We demonstrate that bandgap tuning is highly dependent on the concentration gradient of the as-grown wells and barriers, as well as the thickness of the well, with thinner wells more susceptible to interdiffusion at the interface between the barrier and well. According to our results, the InGaAsP/InGaAsP and InGaAs/InP are well suited for applications requiring a wide range of bandgap values within the same wafer. In the case of the InGaAs/InGaAsP system, its use is limited due to the significant broadening of the photoluminescence spectrum that was observed. The effect of the top InGaAs layer over the InP cladding is also investigated, and leads to a simple way to obtain three different bandgaps in a single intermixing step. © 2008 IEEE.

Publication Date

9-22-2008

Publication Title

LEOS Summer Topical Meeting

Number of Pages

41-42

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/LEOSST.2008.4590479

Socpus ID

51849105591 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/51849105591

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