Title

Intermixing Of Inp-Based Multiple Quantum Wells For Photonic Integrated Circuits

Keywords

IFVD; III-V semiconductors; Impurity-free vacancy disordering; InP; Multiple quantum wells; Photonic integrated circuits; PICs; Quantum well disordering; Quantum well intermixing; Rapid thermal annealing; RTA

Abstract

The intermixing characteristics of three widely used combinations of InP based quantum wells (QW) (InGaAsP/InGaAsP, InGaAs/InGaAsP, InP/InGaAs) are investigated using the impurity-free vacancy disordering (IFVD) technique. We demonstrate that the shift of the bandgap energy is highly dependent on the concentration gradient of the as-grown wells and barriers, as well as the thickness of the well, with thinner wells more susceptible to interdiffusion at the interface between the barrier and well. According to our results, the InGaAsP/InGaAsP and InGaAs/InP are well suited for applications requiring a wide range of bandgap values within the same wafer. The InGaAs/InP resulted in a blue shift of more than 200 nm, while the InGaAsP/InGaAsP provided approximately 100 nm. For the InGaAs/InGaAsP system, we suggest that although a decent bandgap shift of near 80 nm can be obtained, its use is limited due to the significant broadening of the photoluminescence spectrum that was observed. The effect of the top InGaAs layer over the InP cladding is also investigated, and leads to a simple way to obtain three different bandgaps in a single intermixing step. © 2008 American Institute of Physics.

Publication Date

5-21-2008

Publication Title

AIP Conference Proceedings

Volume

992

Number of Pages

271-275

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1063/1.2926869

Socpus ID

43649107455 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/43649107455

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