Title
Chemical-Mechanical Planarization Advances With The Times
Abstract
Chemical-mechanical planarization, a technique which was developed by IBM researchers for the production of extremely flat surfaces on integrated circuit wafers, is progressing with time. The problems including dishing effect and erosion due to pattern density variations across the die is minimized by using pre-CMP procedures. The advanced CMP tools uses robots to handle wafers and process several wafers at a time. Wafer carriers with advanced technology and with variable back-pressure distribution reduces within-wafer nonuniformity to provide accurate and sophisticated slurry system. The interconnect metal aluminum in the modern CMPs has been replaced by copper for the reduction of interconnect resistance. All these development in the CMP has led them for various uses such as in the field of microelectromechanical system (MEMS) fabrication. There are expectations that CMP process will evolve itself into new directions as it is searching for the alternatives for silicon.
Publication Date
1-1-2008
Publication Title
IEEE Potentials
Volume
27
Issue
1
Number of Pages
26-30
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/MPOT.2007.911258
Copyright Status
Unknown
Socpus ID
38349061006 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/38349061006
STARS Citation
Vijayakumar, Arun; Todi, Ravi M.; and Tianbao, Du, "Chemical-Mechanical Planarization Advances With The Times" (2008). Scopus Export 2000s. 10563.
https://stars.library.ucf.edu/scopus2000/10563