Title

An Improved Bidirectional Scr Structure For Low-Triggering Esd Protection Applications

Keywords

Bidirectional electrostatic discharge (ESD) protection; Holding voltage; Latch-up immunity; Triggering voltage

Abstract

An improved dual-polarity silicon-controlled rectifier (SCR) device has been proposed and realized in a 0.6- μ bipolar complementary metal-oxide-semiconductor process. The device can be used to protect electrostatic discharge (ESD) in both the positive and negative directions on pins with a voltage range that goes below ground. Comparing with the conventional bidirectional SCR structures, the new device is more suitable for low-voltage integrated circuit ESD protection applications because it possesses a smaller trigger voltage, a smaller leakage current, and a larger holding voltage. © 2008 IEEE.

Publication Date

4-1-2008

Publication Title

IEEE Electron Device Letters

Volume

29

Issue

4

Number of Pages

360-362

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/LED.2008.917111

Socpus ID

41749118167 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/41749118167

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