Title

Novel Silicon-Controlled Rectifier (Scr) For High-Voltage Electrostatic Discharge (Esd) Applications

Keywords

Electrostatic discharge; Holding voltage; Latchup immunity; Transmission line pulsing (TLP)

Abstract

Electrostatic discharge (ESD) protection for high-voltage integrated circuits is challenging due to the requirement of high holding voltage to minimize the risk of ESD-induced latchup and electrical overstress. In this letter, a new silicon-controlled rectifier (SCR) is developed for this particular application. The SCR is designed based on the concept that the holding voltage can be increased by reducing the emitter injection efficiency in the SCR. This is accomplished by using a segmented emitter topology. Experimental data show that the new SCR can possess a holding voltage that is larger than 40 V and a failure current It2 that is higher than 28 mA/μm. © 2008 IEEE.

Publication Date

7-1-2008

Publication Title

IEEE Electron Device Letters

Volume

29

Issue

7

Number of Pages

753-755

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/LED.2008.923711

Socpus ID

47249136572 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/47249136572

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