Title
Preparation And Properties Of Porous Gan Fabricated By Metal-Assisted Electroless Etching
Keywords
Crystallographic etching; Electroless etching scheme; Metalorganic chemical vapor deposition (MOCVD); Photo-assisted electroless etching (PECE); Porous GaN (PGaN); porous GaN creation and electroless etching; Porous GaN-Raman spectroscopy; Quasi-TO and quasi-LO mode and phonon-plasmon coupling; Transmission electron microscopy (TEM) characterization
Publication Date
3-7-2008
Publication Title
Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications
Number of Pages
77-99
Document Type
Article; Book Chapter
Personal Identifier
scopus
DOI Link
https://doi.org/10.1002/9780470751817.ch4
Copyright Status
Unknown
Socpus ID
84890599531 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84890599531
STARS Citation
Williamson, T. L.; Díaz, D. J.; and Bohn, P. W., "Preparation And Properties Of Porous Gan Fabricated By Metal-Assisted Electroless Etching" (2008). Scopus Export 2000s. 10773.
https://stars.library.ucf.edu/scopus2000/10773