Title

Gamma Radiation Induced Degradation Of Operating Quantum Dot Lasers

Keywords

Gamma-ray effects; Quantum dots; Semiconductor device radiation effects; Semiconductor lasers

Abstract

The degradation of quantum dot lasers (QDLs) due to 1.17 and 1.22 MeV gamma radiation is characterized by changes in threshold current, external slope efficiency and light output. Both operating and non-operating lasers were exposed to a Co-60 source, providing gamma radiation at a dose rate of 0.4 kGy/hr to a total absorbed dose of 1.6 MGy. Degradation rates of exposed, non-operating QDLs were found to be more rapid than for operating QDLs during exposure, suggesting competition between radiation damage effects and annealing effects induced by operation. This is supported by annealing effects exhibited by unexposed, operating lasers resulting in increases in slope efficiency and light output. Differential output power comparisons indicate that degradation is predominately due to changes in current injection efficiency and not increases in non-radiative recombination in the active region. © 2008 IEEE.

Publication Date

4-1-2008

Publication Title

IEEE Transactions on Nuclear Science

Volume

55

Issue

2

Number of Pages

763-768

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TNS.2008.918743

Socpus ID

42149134204 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/42149134204

This document is currently not available here.

Share

COinS