Title

Copper Electromigration Modeling Including Barrier Layer Effect

Keywords

Barrier layer effect; Continuity equation; Copper electromigration; Interconnect lifetime; Pulse-DC stress; Reduced vacancy concentration

Abstract

Electromigration lifetime considering the barrier layer effect under the DC and pulsed DC stress is analyzed numerically. The barrier layer used to stop the copper diffusion also improves the interconnect lifetime. The improvement of lifetime under the DC stress is higher than that under the pulsed DC stress. The lifetime model predictions are also compared with experimental data. Good agreement between the model predictions and experiments is obtained. © 2001 Elsevier Science Ltd. All rights reserved.

Publication Date

12-1-2001

Publication Title

Solid-State Electronics

Volume

45

Issue

12

Number of Pages

2011-2016

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0038-1101(01)00217-9

Socpus ID

0035545643 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0035545643

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