Title

Structural Characterization Of Long-Term Ordered Semiconductors

Keywords

Characterization; Long-term ordered semiconductors

Abstract

We apply investigation of the luminescence, Raman light scattering and mechanical (microhardness, movement of dislocations) properties to the structural characterization of the same representative group of semiconductors as freshly prepared and ordered over 40 years term. Such combination explains new phenomena in luminescence through the data obtained from the other two methods. Systematic monitoring proves that in mono-atomic (Si), binary (GaP, InP) and ternary (Cd-In-S) semiconductors long-term processes lead to the host atoms being placed in their proper equilibrium positions and to a more uniform redistribution of the impurities or structural defects. The results imply that periodic ordering of impurities improved the overall optical and mechanical properties of the material over time. We demonstrate that highly ordered nature of this new crystal lattice facilitates stimulated emission, increases the radiative recombination efficiency of electron-hole pairs and spectral range of luminescence equally at low and at room temperatures.

Publication Date

12-1-2009

Publication Title

Materials Science and Technology Conference and Exhibition 2009, MS and T'09

Volume

2

Number of Pages

698-709

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

77649092495 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/77649092495

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