Title

Properties Of The Long-Term Ordered Semiconductors

Keywords

GaP; Long-term ordering; Luminescence; Optoelectronics; Raman light scattering

Abstract

The 45 years monitoring of optical and mechanical properties of different semiconductor crystals grown in the 1960 th shows that the stimuli for long-term improvement of crystal quality prevail over those which lead to its degradation. Evolution of optical and mechanical properties testifies that now in diamond-like gallium phosphide (GaP) doped by nitrogen (N), the impurity is a regular element of the new crystal lattice - it increases the forbidden gap, and at relevant concentration and level of optical excitation creates a bound excitonic crystal. The ternary compound CdIn 2S 4, now having the perfect normal (instead of partly inversed) spinel crystal lattice, as well as GaP with evenly distributed impurities demonstrate new stable and bright luminescent phenomena, including stimulated emission and "hot" luminescence at room temperature. All chosen semiconductor crystals from different groups of semiconductor compounds demonstrate the long-term ordering and improvement of useful for application properties. Existing technologies help us to reproduce artificially these naturally ordered structures for application in optoelectronics.

Publication Date

10-1-2009

Publication Title

TMS Annual Meeting

Volume

3

Number of Pages

477-484

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

70349440991 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/70349440991

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