Title

Grating-Gate Tunable Plasmon Absorption In Inp And Gan Based Hemts

Keywords

2deg; Grating-gate devices; HEMT; Plasmons; Terahertz detectors

Abstract

Gate-voltage tunable plasmon resonances in the two dimensional electron gas of high electron mobility transistors (HEMT) fabricated from the InGaAs/InP and AlGaN/GaN materials systems are reported. Gates were in the form of a grating to couple normally incident THz radiation into 2D plasmons. Narrow-band resonant absorption of THz radiation was observed in transmission for both systems in the frequency range 10 - 100 cm-1. The fundamental and harmonic resonances shift toward lower frequencies with negative gate bias. Calculated spectra based on the theory developed for MOSFETs by Schaich, Zheng, and McDonald (1990) agree well with the GaN results, but significant differences for the InGaAs/InP device suggest that modification of the theory may be required for HEMTs in some circumstances. © 2009 SPIE.

Publication Date

11-19-2009

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

7467

Number of Pages

-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.826187

Socpus ID

70449470095 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/70449470095

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