Title
Grating-Gate Tunable Plasmon Absorption In Inp And Gan Based Hemts
Keywords
2deg; Grating-gate devices; HEMT; Plasmons; Terahertz detectors
Abstract
Gate-voltage tunable plasmon resonances in the two dimensional electron gas of high electron mobility transistors (HEMT) fabricated from the InGaAs/InP and AlGaN/GaN materials systems are reported. Gates were in the form of a grating to couple normally incident THz radiation into 2D plasmons. Narrow-band resonant absorption of THz radiation was observed in transmission for both systems in the frequency range 10 - 100 cm-1. The fundamental and harmonic resonances shift toward lower frequencies with negative gate bias. Calculated spectra based on the theory developed for MOSFETs by Schaich, Zheng, and McDonald (1990) agree well with the GaN results, but significant differences for the InGaAs/InP device suggest that modification of the theory may be required for HEMTs in some circumstances. © 2009 SPIE.
Publication Date
11-19-2009
Publication Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
7467
Number of Pages
-
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1117/12.826187
Copyright Status
Unknown
Socpus ID
70449470095 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/70449470095
STARS Citation
Peale, R. E.; Saxena, H.; Buchwald, W. R.; Aizin, G.; and Muravjov, A. V., "Grating-Gate Tunable Plasmon Absorption In Inp And Gan Based Hemts" (2009). Scopus Export 2000s. 11500.
https://stars.library.ucf.edu/scopus2000/11500