Title

Tunable Thz Plasmon Resonances In Ingaas/Inp Hemt

Keywords

Detector; HEMT; Plasmon; Terahertz; Two dimensional electron gas

Abstract

Voltage-tunable plasmon resonances in a InGaAs/InP high electron mobility transistor (HEMT) are reported. The gate contact consisted of a 0.5 micron period metal grating formed by electron-beam lithography. Narrow-band resonant absorption of THz radiation was observed in transmission in the range 10 - 50 cm-1. The resonance frequency red-shifts with increasing negative gate bias as expected. Photo-response to a tunable far-IR laser is reported. The device may have application in high-frame-rate THz array detectors for spectral imaging with real-time chemical analysis. © 2009 SPIE.

Publication Date

9-8-2009

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

7311

Number of Pages

-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.818520

Socpus ID

69649096397 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/69649096397

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