Title
Tunable Thz Plasmon Resonances In Ingaas/Inp Hemt
Keywords
Detector; HEMT; Plasmon; Terahertz; Two dimensional electron gas
Abstract
Voltage-tunable plasmon resonances in a InGaAs/InP high electron mobility transistor (HEMT) are reported. The gate contact consisted of a 0.5 micron period metal grating formed by electron-beam lithography. Narrow-band resonant absorption of THz radiation was observed in transmission in the range 10 - 50 cm-1. The resonance frequency red-shifts with increasing negative gate bias as expected. Photo-response to a tunable far-IR laser is reported. The device may have application in high-frame-rate THz array detectors for spectral imaging with real-time chemical analysis. © 2009 SPIE.
Publication Date
9-8-2009
Publication Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
7311
Number of Pages
-
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1117/12.818520
Copyright Status
Unknown
Socpus ID
69649096397 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/69649096397
STARS Citation
Peale, R. E.; Saxena, H.; Buchwald, W. R.; Dyer, G. C.; and Allen, S. J., "Tunable Thz Plasmon Resonances In Ingaas/Inp Hemt" (2009). Scopus Export 2000s. 12116.
https://stars.library.ucf.edu/scopus2000/12116