Title

Very Fast Transient Simulation And Measurement Methodology For Esd Technology Development

Keywords

Field-induced charged device model (FICDM); First voltage impulse (FVI); Technology computer aided design (TCAD); Very fast transient

Abstract

A Transient safe operating area (TSOA) definition for ESD applications is introduced. Within this concept framework, ESD protection device topologies developed in a mixed-signal submicron high-voltage CMOS technology are studied to identify turn-on voltage and the resulting voltage overshoot conditions during fast ESD transients. A state-of-the-art numerical simulation environment used to study and optimize the fast transient response of ESD protection devices is discussed and simulation results are benchmarked versus very fast transmission line pulsing measurements. Constraints for triggering control of clamp devices are also investigated via simulations and pulse measurements. ©2009 IEEE.

Publication Date

11-12-2009

Publication Title

IEEE International Reliability Physics Symposium Proceedings

Number of Pages

769-776

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/IRPS.2009.5173347

Socpus ID

70449130424 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/70449130424

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