Title

Intermixing Of Inp-Based Multiple Quantum Wells For Integrated Optoelectronic Devices

Keywords

III-V semiconductors; Impurity-free vacancy disordering; Multiple quantum wells; Photonic integrated circuits; Quantum well disordering; Quantum well intermixing

Abstract

The intermixing characteristics of three widely used combinations of InP-based quantum wells (QW) are investigated using the impurity-free vacancy disordering (IFVD) technique. We demonstrate that the bandgap energy shift is highly dependent on the concentration gradient of the as-grown wells and barriers, as well as the thickness of the well, with thinner wells more susceptible to interdiffusion at the interface between the barrier and well. According to our results, the InGaAsP/InGaAsP and InGaAs/InP are well suited for applications requiring a wide range of bandgap values within the same wafer. In the case of the InGaAs/InGaAsP system, its use is limited due to the significant broadening of the photoluminescence spectrum that was observed. The effect of the top InGaAs layer over the InP cladding is also investigated, which leads to a simple way to obtain three different bandgaps in a single intermixing step. © 2008 Elsevier Ltd. All rights reserved.

Publication Date

3-1-2009

Publication Title

Microelectronics Journal

Volume

40

Issue

3

Number of Pages

574-576

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.mejo.2008.06.070

Socpus ID

61449145573 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/61449145573

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