Title

Dominant Role Of Grain Boundary Scattering In The Resistivity Of Nanometric Cu Films

Abstract

The dominant role of grain boundary scattering in the low-temperature resistivity of both SiO2 and Ta/ SiO2 encapsulated Cu thin films is demonstrated by the experimental variation and quantification of film thickness, roughness, and grain size. The independent variation in film thickness (28-158 nm) and grain size (35-466 nm) is achieved through subambient temperature film deposition followed by annealing. Experimentally measured film resistivities are compared with both surface scattering and grain boundary scattering models for the classical size effect, showing the dominance of the latter. © 2009 The American Physical Society.

Publication Date

1-5-2009

Publication Title

Physical Review B - Condensed Matter and Materials Physics

Volume

79

Issue

4

Number of Pages

-

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1103/PhysRevB.79.041402

Socpus ID

59249087749 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/59249087749

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