Title
Multi-Wavelength Generation At 1.55 Μm From An External Cavity Semiconductor Laser
Abstract
Optical analog to digital conversion schemes require a sampling source of high repetition rate, low temporal jitter, low amplitude noise, and short pulse duration to achieve the desired sampling rate and number of bits of resolution. We report on the development of an actively mode-locked semiconductor external cavity laser system where the emission is comprised of multiple wavelengths nominally centered around 1.55 microns. Cavity design includes an intra-cavity grating to produce a spatially dispersed optical spectral filtering plane. Amplitude filtering in this spectral plane serves to flatten the effective gain and a rectangular aperture array selects those wavelengths which are allowed to lase. Modelocked at 311 MHz and producing 8 spectral lines, the laser provides a sampling rate of approximately 2.5 GHz. Temporal interleaving of the pulse train by factor 4 increases the sampling rate to 10 GHz.
Publication Date
1-1-2000
Publication Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
4042
Number of Pages
82-87
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1117/12.391897
Copyright Status
Unknown
Socpus ID
0033725275 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0033725275
STARS Citation
Park, Eric D.; Abeles, Joseph H.; and Braun, Alan, "Multi-Wavelength Generation At 1.55 Μm From An External Cavity Semiconductor Laser" (2000). Scopus Export 2000s. 1243.
https://stars.library.ucf.edu/scopus2000/1243