Title

Efficient And Practical Mos Statistical Model For Digital Applications

Abstract

A practical approach of extracting MOS device BSIM3 model parameters to represent process variations is presented. Based on this approach, the performance spread of MOS digital circuit can be predicted. The extraction scheme uses only end-of-line data so no extra measurements are needed. By integrating the model with routine data from fabrication line, the statistical model can be built efficiently and updated frequently to reflect process changes. The developed statistical model is applied to the 0.25 μm technology and verified on a 501-stage ring oscillator circuit.

Publication Date

1-1-2000

Publication Title

Proceedings - IEEE International Symposium on Circuits and Systems

Volume

2

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/ISCAS.2000.856357

Socpus ID

0033701378 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0033701378

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