Title
Statistical Modeling Of Mos Devices And Ics Based On End-Of-Line Manufacturing Data
Abstract
A practical and efficient statistical MOSFET model based on the industry standard BSIM3 model and routine manufacturing data is developed. The model allows for the prediction of performance spread of MOS devices and integrated circuits at the end of manufacturing line and can be updated frequently to reflect process changes. As a result, the statistical model developed can be used to reduce the MOS IC development cycle time and manufacturing cost. The statistical model is applied to the 0.25 μm MOS technology and verified on different MOS devices and two 501-stage ring oscillator circuits.
Publication Date
1-1-2000
Publication Title
2000 Semiconductor Manufacturing Technology Workshop
Number of Pages
259-267
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/SMTW.2000.883104
Copyright Status
Unknown
Socpus ID
84963778648 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84963778648
STARS Citation
Zhang, Q.; Liou, J. J.; and McMacken, J., "Statistical Modeling Of Mos Devices And Ics Based On End-Of-Line Manufacturing Data" (2000). Scopus Export 2000s. 939.
https://stars.library.ucf.edu/scopus2000/939