Title

Surface Modifications Of Cu(In,Ga)S 2 Thin Film Solar Cell Absorbers By Kcn And H 2O 2/H 2So 2 Treatments

Abstract

KCN etching of the Cu xS surface layer formed during the production process of Cu(In,Ga)S 2 thin film solar cell absorbers as well as subsequent H 2O 2/H 2SO 4 etching of the Cu(In,Ga)S 2 surface have been investigated using x-ray photoelectron spectroscopy, x-ray excited Auger electron spectroscopy, and x-ray emission spectroscopy. We find that the KCN etching removes the Cu xS layer - being identified as Cu 2S - and that there is K deposited during this step, which is removed by the subsequent H 2O 2/H 2SO 4 oxidation treatment. When a CdS buffer layer is deposited on the absorber directly after KCN etching, a K compound (KCO 3) is observed at the CdS surface. © 2006 American Institute of Physics.

Publication Date

8-11-2006

Publication Title

Journal of Applied Physics

Volume

100

Issue

2

Document Type

Article

DOI Link

https://doi.org/10.1063/1.2216367

Socpus ID

33746808953 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33746808953

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