Title

Comparison Of Band Alignments At Various Cds/Cu(In,Ga)(S,Se)2 Interfaces In Thin Film Solar Cells

Abstract

The band alignment at the CdS/Cu(In,Ga)(S,Se)2 interface, as derived in our earlier publications, are compared for different absorber compositions. The discussed band alignments were directly determined using a combination of UV- and x-ray photoemission and inverse photoemission. While a flat conduction band alignment can be found for low-gap material, the cell structure with a high-gap absorber shows a cliff-like alignment. The different alignments can be correlated with the respective cell parameters, explaining why the expected linear gain in open circuit voltage for the high-gap absorbers has not yet been achieved. © 2006 IEEE.

Publication Date

1-1-2006

Publication Title

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Volume

1

Number of Pages

412-415

Document Type

Article; Proceedings Paper

DOI Link

https://doi.org/10.1109/WCPEC.2006.279477

Socpus ID

41749102895 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/41749102895

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