Title

Chemical-Mechanical Planarization Of Copper: Role Of Oxidant And Inhibitor

Abstract

Investigations were carried out to understand the effect of hydrogen peroxide as an oxidant and benzotriazole (BTA) as an inhibitor on the chemical-mechanical planarization of copper using electrochemistry and dissolution studies. In the presence of glycine, copper dissolution rate was found to be very high in solution at pH 2 containing 5% H 2O 2 because of Cu-glycine complexation reaction. In such solution, addition of BTA effectively reduces Cu removal rate by the formation of Cu-BTA complex on the surface of copper that inhibits the dissolution. X-ray photoelectron spectroscopy and secondary ion mass spectroscopy investigations help understand the interaction of Cu-oxidant-inhibitor during polishing.

Publication Date

12-1-2003

Publication Title

Proceedings - Electrochemical Society

Volume

21

Number of Pages

52-60

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

3042768012 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/3042768012

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