Title

Evaluation Of Oscillator Phase Noise Subject To Reliability

Keywords

Circuit reliability; Hot carrier; MOSFETs; Oxide breakdown; Voltage controlled oscillators

Abstract

This paper systematically investigates the hot carrier (HC) and soft-breakdown (SBD) induced performance degradations in CMOS voltage-controlled oscillators. After the MOSFET device RF parameter degradations due to HC and SBD effects are experimentally evaluated, the HC and SBD induced performance degradations of a differential 5-stage ring oscillator and a cross-coupled LC oscillator are evaluated for the first time for 0.16 μm technology, focusing on phase noise. Two design techniques are proposed to improve the oscillator performance. The SpectraRF and BERT simulation results verified the effectiveness of the proposed design techniques.

Publication Date

12-1-2003

Publication Title

Proceedings of the Annual IEEE International Frequency Control Symposium

Number of Pages

565-568

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

1542275572 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/1542275572

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