Title

Rf Circuit Design In Reliability

Abstract

A methodology for designing reliable RF circuits is proposed. A model to predict hot carrier and soft breakdown effects on CMOS device parameters in RF circuits is developed. Hot carrier and soft breakdown effects are evaluated experimentally with 0.16 μm CMOS technology. Device stress measurement and SpectreRF simulation are conducted to evaluate the impact of hot carrier and soft breakdown effects on RF circuits such as low noise amplifier and voltage-controlled oscillator performance. Two design techniques to build reliable RF circuits are proposed and verified.

Publication Date

8-22-2003

Publication Title

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Number of Pages

575-578

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

0041659349 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0041659349

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