Title

Chemical Mechanical Planarization Of Copper: Ph Effect

Abstract

The effect of pH and H2O2 on the etching and polishing behavior of copper was studied. The copper surface morphology formed in pH 4 and 6 solution was observed. It was concluded that the chemical mechanical polishing removal rates and etch rates of copper in slurries with 5% H2O2 were found to vary with pH.

Publication Date

11-15-2003

Publication Title

Journal of Materials Science Letters

Volume

22

Issue

22

Number of Pages

1623-1625

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1023/A:1026353028626

Socpus ID

0242410465 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0242410465

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