Title

Fixed Wavelength Selection For The Far-Infrared P-Ge Laser Using Thin Silicon Intracavity Etalon

Keywords

Far-infrared; p-Germanium; Semiconductor Laser; Sub-millimeter; Terahertz; Tunable Laser

Abstract

A thin two-side polished silicon etalon is demonstrated as a fixed-wavelength intracavity selector for the far-infrared p-Ge laser. The active cavity finesse is ∼ 0.1. The wavelength position and spectral purity are maintained over a wide range of laser operating fields. A p-Ge laser with such a selector may find application in chemical sensing, THz imaging, or non-destructive testing.

Publication Date

9-29-2003

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

4968

Number of Pages

18-23

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.478952

Socpus ID

0141493773 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0141493773

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