Title

Empirical Reliability Modeling For 0.18-Μm Mos Devices

Keywords

Lifetime prediction; MOSFET; Reliability; Time-dependent degradation law

Abstract

This paper presents a simple yet effective approach to modeling empirically the 0.18-μm MOS reliability. Short-term stress data are first measured, and the well-known power law is used to project the MOS long-term degradation and lifetime. These results are then used as the basis for the development of an empirical model to predict the MOS lifetime as a function of drain voltage and channel length. Our study focuses on the worst-case stress condition, and both the linear and saturation operations are considered in the modeling. Very good agreement between the measurements and model calculations has been demonstrated. © 2003 Elsevier Science Ltd. All rights reserved.

Publication Date

9-1-2003

Publication Title

Solid-State Electronics

Volume

47

Issue

9

Number of Pages

1515-1522

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0038-1101(03)00006-6

Socpus ID

0038717062 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0038717062

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