Title

A New Extrapolation Method For Long-Term Degradation Prediction Of Deep-Submicron Mosfets

Keywords

Hot carrier effect; Lifetime prediction; MOSFET; Reliability

Abstract

Time-dependent degradation laws have been widely used to predict the MOS long-term degradation characteristics and lifetime. The existing degradation laws, however, often fail to predict accurately the MOS lifetime if only a relatively small number of stress data points are measured. A simple yet effective method has been developed to provide the degradation laws with a better predictability. The method can be easily augmented into any of the existing degradation laws without requiring additional algorithm. Data measured from three different MOS devices are analyzed in support of the model development.

Publication Date

5-1-2003

Publication Title

IEEE Transactions on Electron Devices

Volume

50

Issue

5

Number of Pages

1398-1401

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TED.2003.813473

Socpus ID

0042172914 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0042172914

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