Title

Rf Circuit Design In Reliability

Abstract

A methodology for designing reliable RF circuits is proposed. A model to predict hot carrier and soft breakdown effects on CMOS device parameters in RF circuits is developed. Hot carrier and soft breakdown effects are evaluated experimentally with 0.16 μm CMOS technology. Device stress measurement and SpectreRF simulation are conducted to evaluate the impact of hot carrier and soft breakdown effects on RF circuits such as low noise amplifier and voltage-controlled oscillator performance. Two design techniques to build reliable RF circuits are proposed and verified.

Publication Date

8-18-2003

Publication Title

IEEE MTT-S International Microwave Symposium Digest

Volume

1

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

0043095537 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0043095537

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