Title
A Physical Model Of Time-Dependent Dielectric Breakdown In Copper Metallization
Keywords
"E" model; Copper diffusion; Copper metallization; Reliability; TDDB lifetime
Abstract
A physical model of copper interconnect dielectric breakdown is studied. The general continuity equation about Cu+ diffusion and drift is evaluated. An analytical expression to predict the lifetime of TDDB is developed. The model predictions agree well with the experimental data at different electric fields and temperatures. The lifetime is proportional to the exponential of electric field under an acceleration stress and consistent with the "E" model.
Publication Date
7-21-2003
Publication Title
Annual Proceedings - Reliability Physics (Symposium)
Number of Pages
282-286
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0038310066 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0038310066
STARS Citation
Wu, Wen; Duan, Xiaodong; and Yuan, J. S., "A Physical Model Of Time-Dependent Dielectric Breakdown In Copper Metallization" (2003). Scopus Export 2000s. 1673.
https://stars.library.ucf.edu/scopus2000/1673