Title
Modeling Of Time-Dependent Dielectric Breakdown In Copper Metallization
Keywords
Copper diffusion; Copper interconnect; Dielectric breakdown; E model; Time-dependent dielectric breakdown (TDDB)
Abstract
Dielectric breakdown of copper interconnects has been studied. The general continuity equation on Cu+ diffusion and drift is investigated. An analytical model to predict the lifetime of time-dependent dielectric breakdown is developed. The model predictions agree well with the previously published experimental data at different electric fields and temperatures. Under an acceleration stress condition, the lifetime is proportional to electric field exponentially and consistent with the E model.
Publication Date
6-1-2003
Publication Title
IEEE Transactions on Device and Materials Reliability
Volume
3
Issue
2
Number of Pages
26-30
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/TDMR.2003.811602
Copyright Status
Unknown
Socpus ID
3042806767 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/3042806767
STARS Citation
Wu, Wen; Duan, Xiaodong; and Yuan, Jiann S., "Modeling Of Time-Dependent Dielectric Breakdown In Copper Metallization" (2003). Scopus Export 2000s. 1721.
https://stars.library.ucf.edu/scopus2000/1721