Title

Impact Of Aluminum Concentration And Magnesium Doping On The Effect Of Electron Injection In P-Al X Ga 1-X N

Abstract

The impact of electron injection on the minority carrier diffusion length was studied at various temperatures in p-type Mg-doped GaN, Al0.2Ga0.8N, and Al0.2Ga0.8N/GaN superlattices, which were homogeneously and modulation (barrier only) doped. The activation energies for the electron injection-induced effect were found to be in the range from 190 to 260 meV, which is close to the thermal ionization energy of the Mg-acceptor. The obtained results are in agreement with the previously proposed model of minority carrier transport enhancement due to charging of Mg-centers in p-(Al)GaN. The activation energy of the electron injection effect observed in Al0.2Ga0.8N is consistent with the deepening of Mg-acceptor level due to the incorporation of Al into GaN lattice. The activation energy in the Al0.2Ga0.8N/GaN superlattice, homogeneously doped with Mg, indicates that the main contribution to the effect comes from the capture of injected electrons by the wells. © 2002 Elsevier Science Ltd. All rights reserved.

Publication Date

5-1-2003

Publication Title

Solid-State Electronics

Volume

47

Issue

5

Number of Pages

931-935

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0038-1101(02)00449-5

Socpus ID

0037408026 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0037408026

This document is currently not available here.

Share

COinS