Title

Monolithic Integration Of Dual-Layer Optics Into Broad-Area Semiconductor Laser Diodes

Abstract

A broad-area semiconductor laser diode with two monolithically integrated optical elements is presented. A 275-nm period detuned second-order diffraction grating on the p-doped side layer is combined with a refractive lens transferred into the GaAs substrate so that outcoupling and beam-shaping functions are decoupled. The high-power device produces a circular spot and demonstrates the potential of dual optics integration in broad-area semiconductor diodes. © 2003 Optical Society of America.

Publication Date

4-15-2003

Publication Title

Optics Letters

Volume

28

Issue

8

Number of Pages

651-653

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1364/OL.28.000651

Socpus ID

0037446941 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0037446941

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