Title

Experimental Evaluation Of Device Degradation Subject To Oxide Soft Breakdown

Keywords

Direct current measurement technique; Hard breakdown; Hot carrier stress; Soft breakdown; Stress-induced leakage current

Abstract

Deep submicron MOS transistors subject to oxide soft breakdown (SBD) are evaluated. The experimental results demonstrate that the threshold voltage and mobility degrade after SBD as evidenced by shifts of oxide trap charges and interface states. Hot electron injection triggers more SBD occurrences as shown in the gate and substrate currents after stress. © 2001 Elsevier Science Ltd. All rights reserved.

Publication Date

9-1-2001

Publication Title

Solid-State Electronics

Volume

45

Issue

9

Number of Pages

1521-1524

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0038-1101(01)00252-0

Socpus ID

0035447207 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0035447207

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