Experimental Evaluation Of Device Degradation Subject To Oxide Soft Breakdown
Direct current measurement technique; Hard breakdown; Hot carrier stress; Soft breakdown; Stress-induced leakage current
Deep submicron MOS transistors subject to oxide soft breakdown (SBD) are evaluated. The experimental results demonstrate that the threshold voltage and mobility degrade after SBD as evidenced by shifts of oxide trap charges and interface states. Hot electron injection triggers more SBD occurrences as shown in the gate and substrate currents after stress. © 2001 Elsevier Science Ltd. All rights reserved.
Number of Pages
Source API URL
Zhang, J.; Yuan, J. S.; and Ma, Y., "Experimental Evaluation Of Device Degradation Subject To Oxide Soft Breakdown" (2001). Scopus Export 2000s. 185.