Title

Electron Injection In Iii-Nitride Semiconductors

Keywords

Absorption; Electron beams; Gallium nitride; Photodetectors; Photovoltaic systems; Physics; PIN photodiodes; Scanning electron microscopy; Solar power generation; Temperature dependence

Abstract

In this paper, it is found that electron injection into p-(Al)GaN-either from the electron beams of Scanning Electron Microscope (SEM) or from the application of an external voltage in a solid state device-increase the critical minority carrier diffusion length and lifetime. Consistent changes were observed in the material's optoelectronic properties, including photoresponse (2), and were attributed to charging of deep metastable Mg dopant related centers. The novel effects, induced by electron injection in III-Nitrides, and the ways to exploit them for tailoring the material's fundamental properties will be discussed. Application of the effects for performance improvement of photovoltaic UV detectors will be demonstrated.

Publication Date

1-1-2003

Publication Title

IEEE International Symposium on Compound Semiconductors, Proceedings

Volume

2003-January

Number of Pages

104-105

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/ISCS.2003.1239927

Socpus ID

84943536581 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84943536581

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