Title

Electron Injection-Induced Effects In Gan: Physics And Applications

Abstract

Electron injection into p-type GaN and related compounds leads to a pronounced increase in the minority carrier lifetime. This increase is manifested in a multiple-fold elongation of the minority carrier diffusion length as is evident from the Electron Beam Induced Current (EBIC) measurements in-situ in a Scanning Electron Microscope. Minority carrier transport enhancement as a result of electron injection is consistent with the changes observed in the material's luminescent properties. Based on the activation energy for the electron injection-induced effects, we ascribe this phenomenon to charging of Mg-acceptor related levels. In addition, we demonstrate an impact of electron injection on responsivity of GaN p-i-n photodetectors.

Publication Date

1-1-2003

Publication Title

Materials Research Society Symposium - Proceedings

Volume

764

Number of Pages

341-348

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1557/proc-764-c5.4

Socpus ID

0344496701 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0344496701

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