Title

Laser-Induced Dopant Incorporation In Wide Bandgap Materials: Sic And Gan

Abstract

Gas immersion laser doping (GILD) and molten precursor (predeposition and drive-in diffusion) laser doping are demonstrated in both SiC and GaN. Trimethylaluminum (TMAl) and nitrogen are the precursors used to produce p-type and n-type SiC, respectively. Nd:YAG and excimer laser nitrogen doping in SiC epilayer and single crystal substrates increases the dopant concentration by two orders of magnitude and produces both deep (500-600 nm) and shallow (50 nm) junctions, respectively. Laser-assisted effusion/diffusion is introduced and utilized to dope Al in SiC wafers. Using this technique, a 150 nm p-type doped junction is fabricated in semi-insulating 6H-SiC and n-doped 4H-SiC wafers. Laser-induced p-type doping of Mg in single crystal GaN is conducted using Bis-magnesium dihydrate [Mg(TMHD)2]. Mg concentration and penetration depth up to 1020-1021 cm-3 and 5μm, respectively, are achieved using various laser doping techniques. Comparison between the calculated and measured Mg profile suggests that laser-induced Mg doping in GaN is a multi-mechanism doping process.

Publication Date

1-1-2003

Publication Title

ICALEO 2003 - 22nd International Congress on Applications of Laser and Electro-Optics, Congress Proceedings

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.2351/1.5060064

Socpus ID

57349087304 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/57349087304

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