Title

Laser Direct Write For Wide-Band Gap Semiconductor Device Fabrication: Doping

Keywords

Conducting materials; Gas lasers; Metallization; Optical device fabrication; Semiconductor device doping; Semiconductor devices; Semiconductor lasers; Semiconductor materials; Voltage; Wideband

Abstract

Wide-band gap semiconductor materials promise superior operational voltages, temperatures and frequencies compared to those of silicon. A new and simple process based on laser induced phase transformations is formed as a solution to wide-bandgap material integration issues caused by incompatibilities with conventional dielectric deposition, etching, oxidation, metallization and doping technologies. Laser coupling with wide-bandgap semiconductors selectively converts irradiated regions to conductors, semiconductors or insulators. In this process metallization for drains, sources, interconnects, vias and contacts is intrinsic, without the addition of metals and doping is accomplished using primarily gaseous dopant sources. Laser doping of 4H-SiC is described in this paper.

Publication Date

1-1-2003

Publication Title

IEEE International Symposium on Compound Semiconductors, Proceedings

Volume

2003-January

Number of Pages

102-103

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/ISCS.2003.1239926

Socpus ID

84943578586 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84943578586

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