Title

The Optical Signature Of Electron Injection In P-(Al)Gan

Keywords

Cathodoluminescence; Electron injection; GaN; III nitrides

Abstract

Electron injection into p-type (Al)GaN leads to a considerable (several-fold) decrease of the cathodoluminescence intensity at room and elevated temperatures. Cathodoluminescence measurements revealed a slower intensity decrease with increasing sample temperature and allowed an estimate of the activation energy for the effect to be obtained (192-232 meV), which is consistent with the values for Mg-acceptor thermal ionization in (Al)GaN. The electron injection-induced decay of the sample's luminescence which persists for at least several days at ∼300 K is, therefore, attributed to an injected electron trapping on a Mg level in the (Al)GaN forbidden gap. © 2004 Elsevier Ltd. All rights reserved.

Publication Date

1-1-2003

Publication Title

Superlattices and Microstructures

Volume

34

Issue

1-2

Number of Pages

55-62

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.spmi.2004.02.019

Socpus ID

10844275683 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/10844275683

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