Title

Enhancement Of Minority Carrier Transport In Forward Biased Gan P-N Junction

Abstract

The electron beam induced current (EIBC) effects in GaN p-n junctions were demonstrated. The possible impact of EIBC on heterojunction bipolar transistors was also discussed. The results showed an enhanced minority electron diffusion in the forward biased junctions. Analyzation revealed that electron minority diffusion length increases due to electron beam irradiation.

Publication Date

7-5-2001

Publication Title

Electronics Letters

Volume

37

Issue

14

Number of Pages

922-923

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1049/el:20010605

Socpus ID

0035811751 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0035811751

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