Title

Phototransistor Measurements In Algan/Gan Hbts

Abstract

A fast and reliable method for evaluation of transistor gain in npn AlGaN/GaN heterojunction bipolar transistors is demonstrated. The method is based on phototransistor measurements, which are carried out in situ in a scanning electron microscope. Electron beam current was used in these measurements as an analogue of current in the base, which remained floating. The obtained common-emitter DC current gain, β, is ∼2.5. This value is in good agreement with the values of β obtained from the conventional three-terminal measurements.

Publication Date

11-8-2001

Publication Title

Electronics Letters

Volume

37

Issue

23

Number of Pages

1411-1412

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1049/el:20010948

Socpus ID

0035829491 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0035829491

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